A Variable Capacitance Circuit with MOS Transistors

Project 1: Circuit properties of MOS transistors

Introduction: There are two types of MOS transistors, pMOS and nMOS, which are usually employed as digital switches to implement some Boolean functions. Although the MOS transistors are treated conceptually as digital devices that have logical values either “true” or “false”, they are intrinsically analog devices whose node voltage and branch current are real numbers. Thus, in order to make bes...

Modeling nanoscale quasi-ballistic MOS transistors: a circuit design perspective

The scaling of device technologies poses new challenges, not only in circuit design, but also in device modeling, especially because of the short-channel effects and the emergence of novel phenomena like ballistic transport. Nonetheless, it enables the design of ultra low-power analog and Radio Frequency (RF) circuits by allowing to push the operating points into moderate and eventually weak in...

Device and Circuit Performance Issues with Deeply Scaled High-K MOS Transistors

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for highK dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs....

A new multi-switch circuit with adaptive capacitance for semi-active piezoelectric shunt damping

Piezoelectric-based shunt dampers are developed in recent years because of simplicity in comparison with other methods. In these methods, a part of converted mechanical energy is stored in the internal el...

Floating-gate Mos Synapse Transistors